A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region

This paper presents a compact analytical I-V model for short-channel double-gate transition metal dichalcogenide filed-effect transistors in the subthreshold region. A closed-form expression is proposed for the characteristic length in the scale length approach, which is based on physical device parameters. It is then used to find the channel potential and drain current in the subthreshold region. This model is verified with the numerical results of a nonequilibrium Green's function (NEGF) simulator. There is good agreement between the results of the proposed model and the numerical NEGF simulations in the subthreshold region, while it captures the effects of the device's physical parameters.