Vth-shiftable SRAM cell TEGs for direct measurement for the immunity of the threshold voltage variability

We developed VTSTs for 6T-SRAM and RL-SRAM and evaluated them to investigate the influences of SRAM operation by V
th
fluctuation using measured FCMs and CΔV
th
s. As a result, we successfully confirmed the superior immunity of V
th
fluctuation of the RL-SRAM than the 6T-SRAM.