A 220-GHz Compact Equivalent Circuit Model of CMOS Transistors

This study presents a physical-based RF equivalent circuit model for CMOS transistors. To increase the model accuracy and extend the effective frequency band, the interconnection effects between the input-output pad and the gate-drain of the transistor are described by using a second-order distributed parameter transmission line equivalent circuit network. Both the extrinsic and intrinsic parameters in the model are extracted from the multibias scattering parameters. Based on the proposed model, the S-parameters are calculated and compared with the experimental results. The comparison shows that using second-order distributed parameter transmission line model can improve the phase accuracy of the model remarkably. The proposed model achieves a high accuracy up to 220 GHz.