Fabrication of E-mode InGaN/AlGaN/GaN HEMT using FIB based lithography

In this paper, growth and fabrication of enhancement mode InGaN (5nm)/AlGaN (35nm)/ GaN (1.8 μm) HEMT is presented through focused ion beam (FIB) lithography technique for different alloy material as a source/drain contact. The X-TEM, AES, AFM has been done of the metal deposited surfaces and DC characterization reveals threshold voltage of 1.2 V.