Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films

We investigate crystallinity of sputtered MoS
2
films formed in various sputtering conditions to enhance the migration. We found that high substrate temperature, high radio frequency (RF) power and long throw were effective for crystallinity improvement of sputtered MoS2 films and in these conditions higher Hall-effect mobility of 12 cm
²
/V-s and lower carrier density of 10
¹⁸
cm
⁻³
were achieved.