Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

We investigate low-temperature formation process of sputtered-MoS
2
film. The MoS2 film was formed by radio frequency (RF) sputtering. Then the sputtered-MoS
2
was annealed in H2S at from 200 to 400°C. We find that the hydrogen sulfur (H
2
S) annealing compensate for sulfur defects at low temperature significantly, resulting in a lower carrier density of 2–10
¹⁶
cm
⁻³
.