GaAsSb quantum-well for 1.3-/spl mu/m VCSEL application

Lasing at a wavelength of longer than 1.2 /spl mu/m in a GaAsSb VCSEL is achieved at room temperature. A strain-compensation structure will enable the increase of the number of QWs for suppressing the gain saturation and the Sb content to about 0.37 for longer-wavelength emission. By using this technology, 1.3 /spl mu/m range long-wavelength VCSELs with this material system can be developed in the near future.