A new scheme for high frequency ultrasound generation

A new scheme for high frequency ultrasound generation has been proposed. In the new scheme, a CMUT like geometry will be used to generate a high frequency ultrasound using a low actuation voltage to avoid nonlinear effects of the electrostatic force and dielectric charging of the insulating layers. The generated ultrasound will then be coupled through a low loss polymeric layer to a semiconductor superlattice comprised of multiple periods of alternate thin layers of compound semiconductors such as AlAs and GaAs to amplify the generated ultrasound to a desired pressure range. The device can be fabricated using a conventional fabrication processes in a cost effective manner. A conceptual fabrication process has also been presented. The device can be used for biomedical diagnostic applications to obtain high resolution images.