InAs quantum dot growth by APMOCVD

Although the majority of InAs quantum dots are currently grown on MBE and LPMOCVD systems, investigations into quantum dots grown by APMOCVD are virtually nonexistent. Growth parameters for InAs quantum dots using MOCVD are limited by both the pyrolysis efficiencies of the metalorganics at temperatures below 500/spl deg/C as well as monatomic hydrogen from AsH/sub 3/ possibly leading to increased surface mobilities of the InAs dots. We report on InAs quantum dots deposited on GaAs grown by APMOCVD at 450/spl deg/C.