Ground and excited state lasing near 1.3-/spl mu/m from self-assembled quantum dots on GaAs substrates

Self-assembled In(Ga)As quantum dots (QDs) formed in a GaAs matrix usually emit in the 1-1.2 /spl mu/m wavelength range. It is strongly desired to extend the emission range of QD structures grown on GaAs substrates up to 1.3 /spl mu/m to fit the transparency window of optical fibers. In the present work we study the room temperature characteristics of the broad area (200 /spl mu/m) diode lasers based on triple-stacked InAs QDs covered with 5.5 nm In/sub 0.13/Ga/sub 0.87/As QW. QD planes were separated by 30 nm GaAs spacers.