Sb-Doped $p$ -MgZnO/ $n$ -Si Heterojunction UV Photodetector Fabricated by Dual Ion Beam Sputtering

Sb-doped p-Mg
_0.1
Zn
_0.9
O/n-Si-based heterojunction ultraviolet photodetectors were fabricated using dual ion beam sputtering. Current-Voltage measurements showed good rectifying behavior in fabricated devices with rectifying ratio as high as 251.35 at ± 4 V. The detectors exhibited good ultraviolet spectral response having peak responsivity of 0.025 A/W (at 310 nm) and 0.32 A/W (at 320 nm) at -30 V. The values of peak responsivity and external quantum efficiency increased from 1.7 mA/W and 0.75% (at 0 V) to 0.32 A/W and 134.26% (at -30 V), respectively. The value of detectivity of heterojunction devices was calculated to be 3.65 × 10
¹¹
cm · Hz
^1/2
·W
^-1
at -5 V.