Multifilamentary Conduction Modeling in Transition Metal Oxide-Based RRAM

Filamentary conduction paths through insulating solid electrolytes is a widely accepted theory describing the conduction phenomenon in resistive random access memories (RRAMs). In this work, the relationship between filamentary conduction and multilevel resistive states obtained as a result of VSTOP during the RESET process has been analyzed in detail to understand the underlying physics of resistive switching phenomenon. Subsequently, a multifilamentary conduction mechanism has been proposed and a “3-D multifilamentary rupture model” has been developed in a transition metal oxide-based RRAM. Four different resistance states have been achieved by using three conduction filaments and their subsequent rupture, thus realizing the multiple resistance levels. By varying VSTOP, it has also been verified that the states thus obtained were because of the direct consequence of the conduction filaments.