Si resistivity modification by H+ irradiation

By means of PBW (Proton Beam Writing) technology doped by phosphorus Si monocrystal was irradiated. The energy of ions H
⁺
was 1.5 MeV. The integrated dose was 2.10
¹⁵
p/cm
²
. This treatment of the sample led to modification of the electrical properties of the material. Two layers were appeared under the surface of the silicon. The first one had higher resistivity than non-irradiated Si. The second one formed with much lower resistivity than non-irradiated Si. Electrophysical properties of both layers kept on stable for 180 days.