Guidance to reliability improvement in CBRAM using advanced KMC modelling

In this paper, we use Kinetic Monte Carlo (KMC) simulations to investigate CBRAM variability. A full consistent model able to simulate SET, RESET, retention and endurance characteristics was proposed for the 1st time, allowing to describe experimental data obtained on Al
₂
O
₃
/CuTex based CBRAM. The role of oxygen vacancy generation during programming is described and its impact on reliability (retention and endurance) is elucidated. The origin of the resistance spread is discussed and linked to the conductive filament shape and operating conditions. The cycle to cycle contribution on resistance variability is uncorrelated from the intrinsic resistance distribution limit. Finally, guidelines are given in order to optimize the memory distribution, reduce tail bits and improve CBRAM reliability.