Defect-based compact modeling for RTN and BTI variability

This paper describes a defect-centric based compact modeling methodology for time-dependent threshold voltage variability (V
_TH
), induced by Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN). A Verilog-A based model wrapper is used to implement a threshold voltage shift by adding a variable voltage source at the gate of the core device model. This compact model allows to incorporate all BTI and RTN related electrostatics and kinetics in standard EDA-tools as a `black box' without any custom simulation flow. It can therefore be used in either a manual configuration for academic purposes or be integrated as is into industry standard EDA tools and simulation flows.