Kinetic defect distribution approach for modeling the transient, endurance and retention of a-VMCO RRAM

Amorphous Vacancy Modulated Conductive Oxide resistive switching devices achieve non-localized low current switching by electrical modulation of defect distribution. We present for the first time a quantitative model to explain the operation of these devices. The defect movements are accelerated by lowering of potential barrier under electric field. Using this model, we successfully explain the observed switching characteristics of gradual and analog switching, reset during set bias due to over-programming, along with some insight on the fresh state. We also elucidate its endurance and retention characteristics and discuss a methodology to estimate the number of defects responsible for switching.