Two-Port-Network-Based Method to Measure Electrical Characteristics of MIS Devices With Ultrathin Barriers

MISFETs with ultrathin gate insulator layers are often used as switches in highly integrated circuits. For such transistors, gate currents can be problematic. For devices with nonnegligible channel resistance, such as oxide FETs, gate leakage currents also cause difficulties in measuring the devices' capacitance-voltage (CV) characteristics. Here, we present a method to measure CV characteristics of MIS devices that is also applicable to devices with sizable channel resistances and large leakage currents.