Low frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursors

Low frequency noise behavior of 22 nm Si pMOSFETs featuring with filling W gate using different precursors, i.e., SiH
4
or B
2
H
6
, have been studied. It is shown that carrier number and correlated mobility fluctuations are the underlying mechanisms for the flicker noise. Moreover, devices with B
2
H
6
W processed gate metal were found to have a higher mean trap density and scattering coefficient than SiH
4
W processed gate metal. In addition, both gate-voltage-dependent and gate-voltage-independent Generation-Recombination (GR) noise peaks have been found, which are assigned to traps in the gate oxide or depletion region, respectively.