n+Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer

A bonding technique via passivating interlayer formation is proposed for bulk material heterojunction fabrication. n
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Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150 °C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.