Energy dependence of interface trap density-investigated by the DCIV method [MOSFETs]

Based on DC current-voltage (DCIV) measurements, a new method is proposed for evaluation of the energy dependence of interface trap density in deep sub-/spl mu/m MOSFETs. An emitter forward bias V/sub eb/ dependent parameter N/sub EFF/(V/sub eb/) is introduced and is calculated from the magnitude of the DCIV spectrum peak. The energy dependence of the interface trap density can be acquired from comparing the experimental and theoretical N/sub EFF/(V/sub eb/) curves using least squares optimisation. The method is illustrated with a 0.4 /spl mu/m channel length pMOSFET subject to Fowler-Nordheim stressing.