A novel dual-direction IC ESD protection device

We report the design of a novel dual-direction on-chip IC electrostatic discharge (ESD) protection device. The design was predicted by simulation, matched by measurements and features a high ESD-Si ratio of /spl sim/80 V//spl mu/m, deep snapback, low R/sub on/ of 0.64 /spl Omega/, low leakage (/spl sim/pA), adjustable triggering voltage, and good scalability.