A 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT)

In this paper we report a 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT), which incorporates a heavily doped p-type diffusion at the edges of the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controlled turn-on and turn-off features of the BRT are retained in this new device along with separate turn-on and turn-off regions. A 70% improvement in the maximum controllable current density during resistive turn-off over the conventional BRT has been demonstrated in numerical simulations and experimental measurements.