Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate

In this letter, we have investigated the properties of In
_0.53
Ga
_0.47
As quantum-well (QW) metal–oxide–semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer. We have explored the impact of scaling down In
_0.53
Ga
_0.47
As channel thickness (
$\text{t}_{\mathrm {ch}})$
from 15 to 5 nm. The fabricated devices show excellent electrostatic integrity, such as subthreshold-swing (SS) < 80 mV/decade and drain-induced barrier-lower (DIBL) <20 mV/V. Furthermore, we have extracted the effective mobility (
$\mu _{\textit {n$\_{}$eff}})$
of the fabricated devices to investigate the carrier transport properties of the InGaAs MOSFETs with different values of
$\text{t}_{\mathrm {ch}}$
. The device with
$\text{t}_{\mathrm {ch}} = 15$
nm displayed a value of
$\mu _{\textit {n$\_{}$eff}} = 2,190$
cm
²
/V-s at room temperature. This valuewas found to decrease as
$\text{t}_{\mathrm {ch}}$
was scaled down.