Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy

This paper presents a new nonlinear microwave-based characterization methodology for the study of the deep levels proprieties in gallium nitride (GaN)-based high electron mobility transistors (HEMTs). Currently, it is unique measurement method allowing the extraction of time constants of HEMTs operating under large signal RF conditions. This method improves the conventional dc techniques, since it employs RF excitation during the filling condition to investigate the impact of “real-life” RF excitation on the trapping mechanisms. The experimental results demonstrate that, beyond the presence of Poole-Frenkel effect, the slow detrapping time constant is accelerated by the power dissipation of the trapping bias point. Moreover, it is possible to distinguish the impact of dc and RF conditions on the trapping phenomena. The temperature measurements allow identifying the 0.75-eV deep level, attributed to extended defects in GaN, when ionized under dc excitation. This deep level trap is probably located in the buffer layer and contributes to the RF trapping phenomenon.