High-power and highly reliable operation of Al-Free InGaAs-InGaAsP 0.98-/spl mu/m lasers with a window structure fabricated by Si ion implantation

We have fabricated Al-free InGaAs-InGaAsP-GaAs strained quantum-well 0.98-/spl mu/m lasers with a window structure. The window structure was obtained by Si ion-implantation-induced QW intermixing. The photoluminescence and photocurrent measurements show that an implantation energy of 100 keV and a dose of 1E13 cm/sup -2/ are enough for the fabrication of the window structure in our laser structure. The threshold current of the fabricated 0.98-/spl mu/m lasers with a window structure is 20 mA and a stable lateral mode is obtained up to 300 mW, and these results suggest that there is no scattering loss or absorption due to the introduction of a window structure. The reliability of the lasers is greatly improved by the introduction of the window structure: they exhibited stable operation for more than 1000 h at 240-mW output power at 50/spl deg/C. And this results gives us an estimated lifetime of more than 200 000 h at 25/spl deg/C.