Theoretical optimization of self-pulsating 650-nm-wavelength AlGaInP laser diodes

Self-pulsating laser diodes operating at a wavelength of 650 nm are attractive for high-density optical storage. The main candidate for such a device is an AlGaInP laser diode including an epitaxially integrated saturable absorber. The characteristic self-pulsation occurs due to the interplay between gain in the active region and the absorption within the structure. In the paper, we calculate the dynamics of self-pulsation in this type of AlGaInP laser diode, including a detailed description of gain and absorption within the relative sections. In particular, we identify how, by modifying the structure of the epitaxial absorber layers, we can alter the operating characteristics of these laser diodes.