Electromagnetic Characteristics of Multiport TSVs Using L-2L De-Embedding Method and Shielding TSVs

This paper presents an L-2L de-embedding method for characterizing the electromagnetic properties of through-silicon-vias (TSVs) in 3-D ICs. To the best of our knowledge, this is the first paper that discusses the use of de-embedding method for multiport TSVs. The L-2L de-embedding structure and the analysis algorithm are first introduced. Then, the techniques for meeting two crucial requirements in accurately applying the method on multiport TSVs are proposed. To meet these two requirements, the de-embedding structure is designed to enhance the symmetry and the shielding TSVs are used to decrease the mutual admittance. The simulation results show that with the appropriate design, the shielding TSVs are able to greatly reduce the mutual admittance with little impact on TSVs and RDLs. Finally, the performance of the designed structures with and without shielding TSVs is examined via both full-wave simulation and the measurements. With the full-wave simulation results of TSVs as reference, it turns out that the de-embedding accuracy is significantly improved with the shielding TSVs. Moreover, the de-embedding results based on the measurements show good agreements with those of the simulation ones.