Solution Processed Top-Gate High-Performance Organic Transistor Nonvolatile Memory With Separated Molecular Microdomains Floating-Gate

In this letter, a top-gate high-performance floating-gate organic field-effect transistor nonvolatile memory (FG-OFET-NVM), where the four-layer stacked core architecture is processed by a successive solution spin-coating method, is demonstrated. The floating-gate layer is prepared by spin-coating from a blend solution consisting of poly(styrene) (PS) and 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-Pen). As a result of phase separation, TIPS-Pen aggregates and forms many separated microdomains, which uniformly distribute in thematrix of PS as the charge-trapping sites. The optimal FG-OFET-NVM exhibits excellent memory characteristics, with a large memory window of 26 V, a desired reading voltage of 0 V, a memory ON/OFF ratio larger than 3500, programming/erasing switching endurance over 500 cycles, and good charge-storage retention with a memory ON/OFF ratio larger than 10
³
over 5000 s.