Nonvolatile Resistance Effect Modulated by Pulse With Laser Observed in Nano-Carbon Film

A nonvolatile resistance effect modulated by pulse with laser was observed in nano-carbon oxide semiconductor structures. By applying a short voltage pulse with laser illumination, the lateral resistance of the structure can be permanently changed. The resistance change ratio can reach up to 65%. More interestingly, the effect shows polarity under different illumination spot and voltage directions. This phenomenon is attributed to the trapping effect of laser-stimulated electrons in be useful for the development of laser-and pulse-modulated resistors, switches, and sensors.