Quantitative determination of the dielectric constant of the interfacial layer in PZT ferroelectric capacitors

The crystallization of PbZr/sub 0.2/Ti/sub 0.8/O/sub 3/ thin films was investigated by varying the crystallization temperature and time. Some of the films were not fully crystallized presenting amorphous top layers. The films have been structurally characterized by XTEM and XRD, and electrically characterized by hysteresis and CV measurements. The evolution of orientation and crystallization is observed for the different conditions and is correlated with hysteresis loops. The dielectric constant is determined for both the amorphous layers and the crystalline phase, and the CV behavior is explained.