Process stability control of Pb(Zr,Ti)O/sub 3/ ferroelectric thin film sputtering for FRAM application

Pb(Zr,Ti)O/sub 3/ (PZT) thin films have been fabricated by RF magnetron sputtering. Aiming at productional process development for ferroelectric RAM application, PZT films have been deposited on 6-inch substrates using a 12-inch ceramic target. High deposition rates up to 100 nm/min have been realized by utilizing a high-density PZT target. Flexible compositional control has been achieved by controlling sputtering conditions. A newly introduced electro-static chuck (ESC) type substrate cooling system has been found effective to improve stability of film composition of PZT sputtering.