Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs

We demonstrate an experimental study on the ballistic transport behavior of sub-100 nm GeOI n-MOSFETs, by adopting an ultrafast pulsed I–V system for measurement. High performance GeOI n-MOSFETs suffer severer self-heating effect and traps in the dc characterization process than in a “real” high-speed IC circuit. In this letter, the ballistic transport parameters for nanoscale Ge n-MOSFETs are extracted by the pulsed I–V method, and is compared with the SOI n-MOSFETs. The ballsiticity for Ge MOSFETs is higher than Si transistors at the same gate length
${L}_{\text {G}}$
. Furthermore, the scalability of the ballistic parameters for Ge n-MOSFETs is modeled and predicted for the sub-10-nm technology nodes.