Investigation of GaAsBi/GaAsN Type-II Staggered Heterojunction TFETs with the Analytical Model

We investigate GaAs
_1-x
Bi
_x
/GaAs
_1-y
N
_y
type-II staggered heterojunction tunneling fieldeffect transistors (TFETs) with the analytical model. GaAs
_1-x
Bi
_x
/GaAs
_1-y
N
_y
exhibits a remarkable type-II band lineup and the effective bandgap EG,eff at interface is significantly reduced with the increasing of bismuth (Bi) and nitrogen (N) compositions. Theoretical characterization shows that the band-to-band tunneling probability and current of TFETs are boosted with the decreasing of EG,eff at the GaAs
_1-x
Bi
_x
/GaAs
_1-y
N
_y
staggered tunneling junction by increasing Bi and N compositions. It is demonstrated by the analytical calculation that GaAs
_1-x
Bi
_x
/GaAs
_1-y
N
_y
heterostructure is a potential candidate for high-performance TFET.