Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs

This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO
₂
layer in p-MOSFETs using fast I -V measurement. During negative bias temperature instability, the holes trapped in the HfO
₂
layer will induce Vth degradation. The fast I -V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, influenced by the nitrogen in the TiN gate diffusing to the HfO
₂
layer when the device undergoes thermal annealing. Moreover, these nitrogen interstitials increase with increasing TiN gate nitrogen concentration, which induces more holes being trapped in the HfO
₂
layer.