Performance enhancement in deep-submicron poly-SiGe-gated CMOS devices

Poly-SiGe- and poly-Si-gated N/PMOS devices with physical channel lengths down to 0.1 /spl mu/m and gate oxide thicknesses down to 25 /spl Aring/ were fabricated. Device performance and reliability were characterized. The poly SiGe-gated NMOS and PMOS devices provide superior current drive due to less gate-depletion effect and higher inversion hole mobility in poly-SiGe-gated devices. In addition, gate oxide integrity in poly-SiGe-gated MOSFET is as good as poly-Si-gated device. Poly-SiGe-gated PMOSFET has better reliability than poly-Si-gated PMOSFET due to reduction of boron penetration.