Channel formation for 0.15 /spl mu/m CMOS using through-the-gate implantation

Front-end optimization of a 0.15 /spl mu/m CMOS technology is described demonstrating the feasibility of a Through-the-Gate implantation (TGi) concept for super-steep retrograde well formation. In this paper we show for the first time that excellent transistor matching of NMOS devices with TGi processing is obtained. It demonstrates the absence of any anomalies due to stochastic effects associated with this novel approach for boron super-steep retrograde well formation and excellent 0.15 /spl mu/m CMOS transistor and circuit performance was obtained.