Study of the optical and electrical properties of InGaAs quantum well lasers with carbon doped cladding layer

The optical and electrical properties of carbon doped AlGaAs/GaAs/InGaAs strained quantum well (QW) lasers grown by metalorganic chemical vapor deposition (MOCVD) have been studied. During annealing at the different conditions, the samples exhibit some changes in the photoluminescence (PL) characteristics, the intensity of the PL spectrum will be elevated. The current-voltage (I-V) characteristics of InGaAs strained lasers doped with carbon and zinc are measured at the same injection current densities to study the electrical properties of carbon doped lasers.