/sup 1/H NMR studies of PECVD a-SiN/sub X/:H

/sup 1/H NMR measurements were performed in plasma-chemical-vapor-deposited amorphous hydrogenated silicon nitride (PECVD a-SiN/sub X/:H) films. The spectra were used to analysis the hydrogen content and distribution which were varied with the deposition condition such as substrate temperature (T/sub s/) and radiofrequency (rf) power. The effects of annealing were also discussed.