Tight Focus Toward the Future: Tight Material Combination for Millimeter-Wave RF Power Applications: InP HBT SiGe BiCMOS Heterogeneous Wafer-Level Integration

The push to conquer the sparsely used electromagnetic spectrum between 100 and 1,000 GHz, commonly known as the millimeter-wave (mmW) and sub-mmW regions, is now in full force. The current rapid development of electronic circuits and subsystems beyond 100 GHz is enabled by improvements in high-frequency semiconductor technology and packaging techniques. In this article, we highlight recent advances we have developed in heterogeneous semiconductor-material chip integration for application toward the mmW frequency bands - in essence, a wafer-level integration approach that replaces chip-to-chip connections with monolithic integration.