Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory

In this letter, we propose a resistive switching memory with outstanding comprehensive performance by inserting buffer layers of silicon dioxide doped with boron nitride (BN: SiO
₂
into HfO resistance random access memory (RRAM). X-ray photoelectron spectroscopy (XPS) spectra confirms that hexagonal boron nitride (h-BN) exists in the BN:SiO
₂
layer. The Pt/BN:SiO
₂
/HfO/BN:SiO
₂
/TiN structure was observed to have superior switching endurance >10
¹²
cycles) and higher stability. This can be attributed to the oxygen ions generated during the forming process being localized by h-BN flakes which are formed during the sputter process. A physical model is proposed to explain the resistive switching behavior of HfO RRAM with the inserted BN-based layers.