A dynamic model of an a-Si:H photoconductive sensor

A dynamic model of an a-Si:H photoconductive sensor under a pulse driven condition is proposed. In this model, it is assumed that a high rate of recombination at the interface between a-Si:H and the substrate occurs due to hole drift along the interface when a driving voltage is applied between the electrodes. Calculated results agree with experimental results to an accuracy of 10%. It is shown that the localized state density of the bulk a-Si:H is one of the dominant factors determining the photoresponse of the a-Si:H photoconductive sensor under a pulse driven condition, and that the minimum photoresponse time of this sensor is about 5 ms.<
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