Two-dimensional electron gas charged-coupled devices (2DEG-CCD's)

The two-dimensional electron gas charged-coupled device (2DEG-CCD) structure for III-V and other heterojunction materials is reviewed. Device design considerations for gate, insulator, and channel material parameters are presented. Optimization of 2DEG-CCD performance parameters such as well capacity, dark current, and transfer efficiency is discussed. Experimental results on AlGaAs-GaAs uniform-doped and planar-doped devices are reviewed. AlGaAs-GaAs 2DEG-CCDs have been shown to operate with 0.9997 charge transfer efficiency, at frequencies ranging from 130 kHz to 1 GHz. A review of fundamental principles of operation and a discussion of structural and material configurations are presented.<
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