A new concept silicon homojunction infrared sensor

A new silicon photovoltaic infrared sensor is proposed. Its basic operational principle is demonstrated. The sensor consists of three regions with a homojunction structure, having a flexibly designed barrier height corresponding to the cutoff wavelength. The operation of the sensor is based on infrared absorption and internal photoemission by free electrons in a conduction band in degenerate n/sup ++/-type silicon. The fabricated sensors have verified the basic operational principle and have shown that the detectable wavelength range extends to over 12 mu m.<
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