Abstract:
Novel device structures with vertical channels gated by TSV's are demonstrated. The unique device structure is realized in a standard TSV process flow, without new materi...Show MoreMetadata
Abstract:
Novel device structures with vertical channels gated by TSV's are demonstrated. The unique device structure is realized in a standard TSV process flow, without new material systems or processes. They can be used for both characterizing the TSV process as well as enable new functions. They can be easily integrated into product designs thus enabling field monitoring.
Published in: 2016 IEEE International Electron Devices Meeting (IEDM)
Date of Conference: 03-07 December 2016
Date Added to IEEE Xplore: 02 February 2017
ISBN Information:
Electronic ISSN: 2156-017X