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Vertical channel devices enabled by through silicon via (TSV) technologies | IEEE Conference Publication | IEEE Xplore

Vertical channel devices enabled by through silicon via (TSV) technologies


Abstract:

Novel device structures with vertical channels gated by TSV's are demonstrated. The unique device structure is realized in a standard TSV process flow, without new materi...Show More

Abstract:

Novel device structures with vertical channels gated by TSV's are demonstrated. The unique device structure is realized in a standard TSV process flow, without new material systems or processes. They can be used for both characterizing the TSV process as well as enable new functions. They can be easily integrated into product designs thus enabling field monitoring.
Date of Conference: 03-07 December 2016
Date Added to IEEE Xplore: 02 February 2017
ISBN Information:
Electronic ISSN: 2156-017X
Conference Location: San Francisco, CA, USA

References

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