CCD arrays for readout of electrophotographic latent images

Arrays of charge sensing elements have been fabricated for nondestructive electronic readout of latent images on electrophotographic materials. The arrays are implemented in the form of a monolithic integrated circuit in which each sensing element is a 5- mu m *5- mu m MOS capacitor; 2048 such elements are arranged in a linear format with effective 5- mu m element-to-element pitch. On-chip circuitry allows for multiple sampling at each sensing site for enhancing signal-to-noise ratio. The resulting signals from the sense elements are multiplexed onto charge-coupled-device (CCD) shift registers for high-speed serial readout. To allow for the small sensor-to-film gap (on the order of 10 mu m) required for capacitive sensing, the chip's bond pads are recessed in deep grooves below the active array surface. The array is packaged within a hydrostatic air bearing which maintains a constant and uniform gap. The response of the array to targets of high spatial frequency recorded on various electrophotographic materials is in excellent agreement with analytical predictions.<
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