A high-sensitivity MOS photo-transistor for area image sensor

A new MOS phototransistor, called a double-gate floating surface phototransistor, has been fabricated and evaluated. In the phototransistor cell, the gate area has been divided into two parts, the accumulation section and the detection section, in order to realize a low input capacitance for a high optical gain. The device achieved a noise equivalent exposure of 2*10/sup -4/ lx at 16-ms integration time and a dynamic range of 75 dB with a new line potential modulation operation.<
>