Width-Dependent Characteristics of Graphene Nanoribbon Field Effect Transistor for High Frequency Applications

A numerical simulation based on self-consistent solution of non-equilibrium Green's function (NEGF) formulism and Poisson equation has been developed in order to investigate the width-dependent characteristics of GNR FETs in two GNR families (3p,0) and (3p+1,0). On-state characteristics such as transfer characteristics, transconductance, gate capacitance, intrinsic cut-off frequency and intrinsic gate-delay time have been studied. We found that while the maximum intrinsic cut-off frequency of both GNR families are increased by increasing the GNR width, GNR(3p,0) shows superior performance such as more than twice larger intrinsic cut-off frequency at lower gate voltages, higher drive current and lower intrinsic gate-delay time, indicating GNR(3p,0) a more preferable attribute than GNR(3p+1,0) for high frequency applications.