Novel galvanic isolation based on spin valve GMR magnetic field sensors

A novel technology for integrated galvanic signal isolation is presented. The new approach combines MEMS derived thick film metallization and polymer processing technology with spin valve giant magnetoresistive (GMR) materials on a silicon substrate to yield a tiny, high performance signal isolator. This isolator device represents a unit cell that can be fabricated in single or multiple channel versions and can be monolithically integrated with standard silicon ICs. This will allow the realization of high-level isolated interface functions in low cost, small footprint, low profile packages.