A high-gain monolithic D-band InP HEMT amplifier

This paper describes a three-stage monolithic amplifier that exhibits a small-signal gain of 30 dB at 140 GHz. The amplifier employs AlInAs/GaInAs/InP high electron mobility transistor devices with 0.1/spl times/150 /spl mu/m/sup 2/ gate periphery, is implemented with coplanar waveguide circuitry fabricated on an InP substrate, and occupies a total area of 2 mm/sup 2/. Gain exceeding 10 dB was measured on-wafer from 129 to 157 GHz. This is the highest reported gain per stage for a transistor amplifier operating at these frequencies.