Electrochemical formation of N-type GaN and N-type InP porous structures for chemical sensor applications

The feasibility of liquid-phase sensors based on n-type GaN and n-type InP porous structures was investigated. The response currents to the addition of H
₂
O
₂
increased on the porous electrodes. The source-drain currents of ion-sensitive field-effect transistors having a porous channel changed with good response to the pH values. The sensitivities of two kinds of chemical sensors to ions were drastically enhanced by the implementation of the porous structures having large surface areas with good conductivity.